FIELD: microelectronics. SUBSTANCE: n-type pocket regions, silicon oxide field-effect and gate layers are formed on silicon plate and polysilicon layer is applied to it. Polysilicon is alloyed by phosphor. Photoresist mask with configuration of n-channel transistor gates and parts of polysilicon interconnections are formed. Polysilicon is etched by chemical treatment with plasma. It is then alloyed with arsenic to create n-type active diffusion regions. Photoresist mask is removed, arsenic admixture is activated. Photoresist mask with configuration of p-channel transistor gates and parts of interconnections are formed. Polysilicon layer is etched by chemical treatment with plasma, p-type diffusion regions are alloyed with boron. Photoresist mask is removed, surface is oxidized. Phosphor-silicate glass layer is applied and framed contact ports are opened, metal interconnections are formed, crystals are passivated. EFFECT: facilitated procedure. 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| PROCESS OF MANUFACTURE OF P-CHANNEL MIS LSICS | 1989 |
|
SU1752142A1 |
| PROCESS OF MANUFACTURE OF LARGE-SCALE INTEGRATED COS/MOS CIRCUITS | 1992 |
|
RU2046454C1 |
| PROCESS OF MANUFACTURE OF STRUCTURES OF P-CHANNEL MIS LSIC | 1990 |
|
RU2043677C1 |
| METHOD OF MANUFACTURE OF LSI CIRCUITS BASED ON VALVE MATRIXES | 1990 |
|
RU2017266C1 |
| PROCESS OF MANUFACTURE OF STRUCTURES FOR MIS LSICS | 1990 |
|
RU1743315C |
| RADIATION-RESISTANT LSIC MANUFACTURING METHOD | 2010 |
|
RU2434312C1 |
| PROCESS OF FORMATION OF CMOS STRUCTURES WITH POLYSILICON GATE | 1992 |
|
RU2038647C1 |
| METHOD FOR GENERATION OF CMOS-STRUCTURES WITH POLYSILICIC GATE | 1992 |
|
RU2056673C1 |
| PROCESS OF MANUFACTURE OF TWO-LEVEL COATING | 1991 |
|
RU2025825C1 |
| MANUFACTURING PROCESS FOR DOUBLE-LEVEL METALLIZED LARGE-SCALE INTEGRATED CIRCUITS | 1991 |
|
RU2022407C1 |
