FIELD: microelectronics. SUBSTANCE: in process of manufacture of structures of p-channel MIS LSIC layers of silicon oxide and nitride are applied on to silicon substrate, mask is formed on active regions, anti-inversion doping is performed, layer of field silicon oxide is grown, photoresistive mask is formed, silicon nitride is removed from active diffusion regions, active diffusion regions are doped and their surfaces are oxidized, undergate dielectric layer is formed, contact bonding and interconnections are formed. EFFECT: increased reliability and expanded application range of LSICs thanks to increased of break-through voltage of undergate layer of silicon oxide.
