RADIATION-RESISTANT LSIC MANUFACTURING METHOD Russian patent published in 2011 - IPC H01L21/8238 

FIELD: electricity.

SUBSTANCE: radiation-resistant LSIC (large-scale integrated circuit) manufacturing method involves creation on initial substrate of field silicon oxide and active areas of transistors, channel stoppers, gate silicon oxide, polysilicon areas of gates of transistors and interconnections, masks for alloying with n- and p-type impurities of channel active stoppers and active areas of transistors, interlayer insulation, contact windows and metal coating of LSIC. During creation of active areas between channels, drains, sources of n-type transistors and p-type channel stoppers there formed are additional buffer channel sections, and gate silicon oxide is created after field silicon oxide is formed. During formation of transistor gates there created are additional polysilicon gate channel stoppers fully overlapping buffer channel sections of active areas. Mask for alloying active n-type areas partially opens field areas and additional polysilicon gate areas in the sections adjacent to channels of n-type transistors. Mask for alloying active p-type areas partially opens additional polysilicon gate areas in the sections adjacent to p-type channel stoppers.

EFFECT: improving integration degree and simplifying the method.

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