PROCESS OF MANUFACTURE OF LARGE-SCALE INTEGRATED COS/MOS CIRCUITS Russian patent published in 1995 - IPC

Abstract RU 2046454 C1

FIELD: microelectronics. SUBSTANCE: process of manufacture of large-scale integrated COS/MOS circuits involves doping of field regions of both types of conductance with impurity of first type of conductance, formation of preliminary silicon oxide layer which thickness exceeds not more than 1.5 times thickness of silicon nitride layer, etching of preliminary silicon oxide layer on field regions of second type of conductance after creation of second photoresistive mask and doping with impurity of second type of conductance. EFFECT: formation of doped field regions with the aid of two photolithographic processes. 4 dwg

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RU 2 046 454 C1

Authors

Meshcherjakov N.Ja.

Sukhorukov N.I.

Dates

1995-10-20—Published

1992-03-03—Filed