FIELD: measurement equipment.
SUBSTANCE: in the method to determine a coefficient of relative efficiency and an equivalent dose of a source of X-ray radiation, each LSI includes inbuilt dosimeters of support in the form of independent test n- and p-channel transistor structures MIS, connected in the capacitor mode, these structures are independently radiated within different LSI by pulse radiation of an X-ray source or radiation of gamma quanta of a nuclide source Co60, electrical and physical parameters of structures MIS before and in process of radiation are determined using the method of coulometric measurement and by change of pulse drop of voltage on a measurement resistor RH, connected in series between the body of the structure MIS formed in accordance with a single basic technology, as for the main LSI, and its increment under exposure to ionising radiations of different nature, the value RDEF of the result of LSI exposure to the technology CMOS/DG radiation of a pulse X-ray source is produced in comparison with gamma radiation of a reference nuclide source Co60 using a certain ratio.
EFFECT: getting a value of a coefficient of relative efficiency and an equivalent dose of a source of X-ray radiation in real time mode, which makes it possible, using the available dependence for transistors, to assess radiation change of amplitude and time parameters.
4 cl, 8 dwg
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Authors
Dates
2013-04-27—Published
2011-08-31—Filed