PRESSURE PICKUP AND METHOD OF MAKING IT Russian patent published in 1995 - IPC

FIELD: measuring technique. SUBSTANCE: pressure pickup includes a semiconductor crystal 1 with the membrane 8 and with the strain gage resistors 3. The contact areas 5,6 are arranged on a periphery of the crystal 1. The areas 5,6 are connected by joining portions 4 with a bridge circuit. On an outer surface of a ring of the holder 2 compensation members, being the resistor 9 and a plating in the form of current conducting wires 11, are arranged. On the annular parts 12 of the wires 11 a solder is applied, being in the form of the junction 10 on a lower side and in the form of a film on an upper side. The electrical leads 13 are soldered to the upper end portion of the plating. At process of making the pickup on a surface of the insulation ring film resistors and current leading film conductors are being formed; a layer of the solder is being applied; the ring and crystal are being joined, characteristics of the pickup are being measured and the pickup is being tuned by selective evaporation by a laser beam of portions of resistors, had been formed on the ring. EFFECT: lowered size of the pickup and its enhanced manufacturing procedure. 3 cl, 3 dwg