MIS CAPACITOR Russian patent published in 1996 - IPC

FIELD: metal-insulator-silicon capacitors are chips members used in production of different analog and digital systems made as integrated circuits. SUBSTANCE: metal-oxide-semiconductor capacitor has: two plates, one of which is made of polysilicon layer and second one - of high specific conductivity material layer and plates are insulated from each other by dielectric layer; high-allied areas formed in substrate; source of bias voltage, one pole of which is connected to substrate and second pole is connected with high-alloyed areas of second conductivity type and its polarity is opposite to sign of main carriers in high-alloyed areas. EFFECT: metal-insulator-silicon capacitor structure allows to expand sphere of its use in chips production. 2 dwg