STORAGE CAPACITOR OF INTEGRATED CIRCUIT MEMORY ITEM Russian patent published in 1995 - IPC

Abstract RU 2030813 C1

FIELD: electronic engineering. SUBSTANCE: storage capacitor has first plate of conducting material layer formed on surface of depression made in semiconducting strip whose surface has projections; capacitor dielectric, and second plate both applied to entire surface of first plate, including projections. EFFECT: improved design. 1 dwg

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RU 2 030 813 C1

Authors

Krasnitskij V.Ja.

Turtsevich A.S.

Dovnar N.A.

Smal' I.V.

Tsybul'Ko I.A.

Dates

1995-03-10—Published

1991-06-24—Filed