METHOD OF MAKING SHUNT DIODE FOR SPACECRAFT SOLAR BATTERIES Russian patent published in 2011 - IPC H01L21/329 

FIELD: physics.

SUBSTANCE: in the method of making a shunt diode for solar batteries of spacecraft, which involves formation of dielectric insulation on the working side in an epitaxial layer of a silicon monocrystalline substrate, formation of a p-n junction through deposition with subsequent up-diffusion, metal coating of the working side of the substrate, thinning the substrate on the reverse non-working side, metal coating the non-working side and connecting electroconductive buses, thinning the substrate on the reverse non-working side is carried out after formation of a photosensitive layer on the working side of the substrate illuminated with a UV beam through successive abrasive treatment and plasmochemical etching of the non-working side, after which the photosensitive layer is removed in a developer, where plasmochemical etching is carried out at a depth of not less than 10 mcm at temperature not higher than 120°C, and thickness of the photosensitive layer is selected using a defined relationship, depending on the thickness of the metal coating on the working side.

EFFECT: high reproducibility of the manufacturing process and manufacturability of the article.

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