FIELD: manufacture of semiconductors. SUBSTANCE: formation of recession in plates of gallium phosphide(100) is conducted in etching agent containing iodate of univalent metal 5-15 per cent by mass; hydrochloric acid 7-25 per cent by mass; water being the balance or metaperiodate of univalent metal 1-10 per cent by mass, hydrochloric acid 10-20 per cent by mass, water being the balance with agitation with rotational speed 30-60 rpm at temperature 0-30 C and arrangement of topology elements of mask on plate in direction <100>. EFFECT: increased quality of etching due to enhancement of polishing properties of etching agent and keeping of topology in process of deep (40-50 μm) etching. 1 tbl
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