METHOD TO PRESERVE SURFACE OF SUBSTRATES FROM GALLIUM ARSENIDE Russian patent published in 2013 - IPC H01L21/306 

FIELD: electricity.

SUBSTANCE: in the method to preserve surfaces of substrates from gallium arsenide, including chemical-dynamic polishing of semiconductor surface in a polishing etching agent, containing concentrated sulfuric acid, hydrogen peroxide and water at the ratio of H₂SO₄:H₂O₂:H₂O=5:1:1, washing in deionised water, pasturing of a layer of residual oxide in aqueous solution of concentrated hydrochloric acid H₂O:HCl=10:1 until hydrophobic properties of a pure surface of a substrate from gallium arsenide are manifested, washing in deionised water, drying in a centrifuge, treatment in selenium vapours, pasturing of the produced layer of gallium selenide in the aqueous solution of hydrochloric acid H₂O:HCl=10:1, washing in deionised water, drying in the centrifuge, after drying the substrate is repeatedly treated in selenium vapours in the chamber of quasiclosed volume with formation of an epitaxial layer of gallium selenide (Ga₂Se₃) at substrate temperature - T_s=(310÷350)°C, temperature of chamber walls - T_w=(280÷300)°C, temperature of selenium - T_Se=(230÷250)°C for 3÷10 minutes and then packaging is carried out without usage of inert medium.

EFFECT: method makes it possible to preserve epiready properties of substrates on air without usage of inert medium at room temperature and use for epitaxial growing of semiconductor hetero- and nanostructures.

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