FIELD: semiconductor devices. SUBSTANCE: package has ceramic base carrying serially arranged layers of high-melting material and molybdenum; used as high-melting material is solid solution of molybdenum in titanium in the following proportion of components, mass percent: Mo - 12.5-16.6; Ti - 83.4-87.5. EFFECT: reduced thermal resistance and improved reliability.
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF CERAMICS METALLIZATION | 2017 |
|
RU2665939C1 |
| METALLISATION METHOD OF CERAMICS USING METAL-COATED TAPE | 2018 |
|
RU2711239C2 |
| METALLISING PASTE AND METHOD OF ALUMINIUM NITRIDE CERAMICS METALLISATION | 2013 |
|
RU2528815C1 |
| COMPOSITION FOR METALLIZATION OF CERAMICS | 2022 |
|
RU2803271C1 |
| METALISED CERAMIC SUBSTRATE FOR ELECTRONIC POWER PACKS AND METHOD OF CERAMICS METALISATION | 2011 |
|
RU2490237C2 |
| SOLID-STATE DEVICE PACKAGE | 2009 |
|
RU2405229C2 |
| METHOD OF METALLIZATION OF CERAMICS | 0 |
|
SU1756311A1 |
| PROCESS FOR MANUFACTURING COMPOSITE MATERIAL FOR WALL OF ELECTROPHYSICAL DEVICE | 0 |
|
SU1112429A1 |
| METHOD OF PRODUCING AIRTIGHT CERAMIC-METAL SEAL USING COMPENSATING ELEMENT | 2010 |
|
RU2455263C2 |
| METHOD FOR METALLIZATION OF ALUMINUM NITRIDE CERAMICS | 2021 |
|
RU2778363C1 |
