FIELD: electrical engineering.
SUBSTANCE: proposed package comprises ceramic base with refractory metal layer deposited in vacuum thereon, 1.5-2.0 mcm-thick nickel layer and 1.5-2.0 mcm-thick gold layer: device output terminals and flange being soldered on said layers, while 3-4 mcm-thick load coat is applied on soldered package in one layer without interlayer.
EFFECT: lower heat resistance and higher reliability of high-power transistors.
1 tbl, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| HOUSING OF SEMICONDUCTOR DEVICE | 2011 |
|
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| PROCESS OF MANUFACTURE OF PACKAGE OF MICROCIRCUIT | 1991 |
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| MICROWAVE INTEGRATED CIRCUIT | 2020 |
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RU2803110C2 |
| SEMICONDUCTOR DEVICE PACKAGE | 1978 |
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SU758972A1 |
