DRIFT DIODE WITH ABRUPT RECOVERY OF REVERSE RESISTANCE BASED ON POLYTYPE 4H SILICON CARBIDE Russian patent published in 2025 - IPC H10D8/00 

FIELD: electricity.

SUBSTANCE: invention relates to power semiconductor electronics, namely to pulse high-voltage equipment, and can be used in drift diodes with abrupt recovery of reverse resistance (hereinafter DDAR) as high-speed switches of breaking type for generators of ultra-short voltage pulses. Drift diode with abrupt recovery of reverse resistance based on silicon carbide of 4H polytype includes uniformly doped substrate of n⁺-type conductivity, on which a gradient-doped p^--type conductivity layer and a uniformly doped p⁺-type conductivity layer are grown, and on p⁺-type conductivity layer outer side and substrate outer side anode and cathode ohmic contacts are formed, additionally there is a layer with uniform doping of n^--type conductivity, located between substrate of n⁺-type conductivity and gradient-doped layer of p^--type conductivity. P^--type conductivity layer is gradient-doped with aluminium acceptors with an increase in the concentration of the dopant – aluminium in the direction of the p⁺-layer with a constant concentration gradient throughout the layer. Ratio of thickness of layers of n^--type conductivity and p^--type conductivity is 1:7.

EFFECT: faster operation.

1 cl, 1 dwg, 1 tbl