SENSOR STRUCTURE Russian patent published in 1997 - IPC

Abstract RU 2086971 C1

FIELD: system monitoring state of liquid and gaseous media. SUBSTANCE: proposed sensor structure has semiconductor conductive substrate, isolating layer with metal electrode positioned on it, gas-sensitive layer and contacts to semiconductor substrate and electrode. Gas-sensitive layer has open surface, is located on butt region of insulating layer and contacts electrode and substrate. EFFECT: facilitated manufacture, enhanced functional reliability. 1 dwg

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RU 2 086 971 C1

Authors

Efimov V.M.

Kuryshev G.L.

Vorontsov V.V.

Dates

1997-08-10—Published

1993-06-24—Filed