ION SOURCE Russian patent published in 1994 - IPC

FIELD: electron devices. SUBSTANCE: hollow cathode of gaseous-discharge chamber of ion source is manufactured in the form of set of individual cathode elements isolated from each other. One of adjacent cathode elements in any adjoining pair is positioned with partial embracing of other with gap between their facing surfaces. Value of gap does not exceed doubled width of layer of volumetric positive charge between cathode and plasma formed in its space. Specified arrangement of cathode elements prevents penetration of discharge plasma and ions emitted from its boundary into gaps between cathode elements. Consequently sputtering of gaseous-discharge chamber and its structural elements located between cathode and body with accelerated ions is avoided. As a result of it deposition of metal on insulators does not occur and service life of ion source is prolonged. Each cathode element may be connected to source of discharge voltage via separate resistor. EFFECT: prolonged service life of ion source. 4 cl, 2 dwg