METHOD TO MODIFY SURFACES OF METALS OR HETEROGENEOUS STRUCTURES OF SEMICONDUCTORS Russian patent published in 2013 - IPC H01L21/263 

FIELD: machine building.

SUBSTANCE: in the method of modification of the surface of metals or heterogeneous structures of semiconductors by means of exposing them to energy of ionising radiation; into a structure of a part or design of these materials they introduce a dielectric layer, radiate it with a source of pulse X-ray radiation (XR), and to determine the positive effect they use results of comparison of measurements of microhardness, optical properties or research of surface morphology before and after impact of the ionising radiation and isothermal annealing of semiconductor HPPs.

EFFECT: modification of metal surfaces and semiconductor heteroepitaxial structures, strengthening of metal parts and structures with a complex shape of surface, modification of morphological and electrophysical properties of semiconductor HPPs.

5 cl, 14 dwg