PROCESS OF LASER GETTERING OF SEMICONDUCTOR PLATES Russian patent published in 1995 - IPC

FIELD: manufacture of semiconductor devices. SUBSTANCE: gettering is conducted by creation of layer disturbed by laser radiation of pulse or continuous type on working or nonworking side of plate. Disturbed layer is formed in the form of raster of lines over perimeter of plate. Lines of raster should not cross edge of plate. Raster is formed with 20-100 μ spacing. Width of raster lines is bigger than depth of melted semiconductor. Scanning rate is 5-80 cm/s. Density of power of laser radiation is sufficient for melting of semiconductor but is insufficient for its evaporation. EFFECT: facilitated manufacture, enhanced quality of semiconductor plates. 5 cl, 7 dwg, 10 tbl