METHOD OF SELECTING INTEGRAL MICROCIRCUITS FOR RADIATION STABILITY AND RELIABILITY Russian patent published in 2005 - IPC

Abstract RU 2254587 C1

FIELD: electronic engineering.

SUBSTANCE: set of microcurcuits is irradiated step by step (number of steps equals two or more) with small dose of ionizing radiation having power from several kilorad to several tens of kilorad. Standard electric characteristics of microcircuits are measured as well as minimal supply voltage of each circuit at which voltage a microcircuit is still capable of working. Dosage dependences are built; the dependences describe changes in standard characteristics and minimal voltage of operation under effect of radiation. Dose of failure is predicted for any microcircuit by means of the dependences, at which dose at least one standard characteristic reaches its limit value or minimal supply voltage reaches nominal value of supply voltage of microcircuit. Reliability of microcircuit is defined after subjecting irradiated microcircuits to burning from deviation in value of one or several standard characteristic or minimal supply voltage from their initial values taken before they were subject to radiation. Method allows to predict radiation stability of microcircuits and selection of microcircuits having increased levels of radiation stability and reliability and (or) rejection of microcircuits having abnormally low levels of radiation stability and reliability.

EFFECT: reduced costs; ability to keep radiation characteristics of systems; high degree of adaptability to manufacture.

1dwg, 2 tbl

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RU 2 254 587 C1

Authors

Anashin V.S.

Popov V.D.

Dates

2005-06-20Published

2003-12-26Filed