DIFFUSATE FOR DOPING SEMICONDUCTORS OF AB TYPE Russian patent published in 1995 - IPC

Abstract RU 2050031 C1

FIELD: microelectronics. SUBSTANCE: diffusate for doping semiconductors of A3B5 type contains 2-5 water solution of polyvinyl alcohol and 1-10 percents of doping additive in volume. This improves reproducibility of doping process and retains perfect crystal structure of semiconductor. EFFECT: decreased loss currents of diffusion p-n junction. 2 tbl

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RU 2 050 031 C1

Authors

Busygina L.A.

Gorelenok A.T.

Kamanin A.V.

Mokina I.A.

Jurre T.A.

Jakimenko I.Ju.

Shmidt N.M.

Dates

1995-12-10Published

1993-06-21Filed