PROCESS OF PLASMA-CHEMICAL ETCHING OF MATERIALS FOR MICROELECTRONICS Russian patent published in 1997 - IPC

FIELD: manufacture of integrated circuits. SUBSTANCE: material placed on substrate holder into magnetic field and under HF voltage having frequency 13.56 MHz is subjected to action of chemically active plasma of HF induction discharge of reduced pressure outside zone of its predominant generation. Plasma is generated by HF induction discharge with frequency 40-500 MHz in magnetic field with intensity 30-300 Oe under decreased pressure. EFFECT: enhanced productivity. 1 dwg