METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE BASED ON AB COMPOUNDS AND ITS FORMATION METHOD Russian patent published in 2011 - IPC H01L21/3105 B82B1/00 

FIELD: electricity.

SUBSTANCE: metal-dielectric-semiconductor structure on the basis of A₃B₅ compounds includes semiconductor substrate A₃B₅, dielectric layer located on its working surface and being anode oxide, which has been obtained by anodic treatment of substrate in plasma of glow discharge, and sputtered metal layer on dielectric layer. Dielectric layer is tunnel and thin and included in composition of layers - substrate material oxide layer and cathode material oxide layer, which is used during anodic treatment in plasma; dielectric layer is typical of boundary line with substrate with density of surface states on boundary line "semiconductor substrate-dielectric" of less than 5·10¹⁰ cm^-2 eV^-1.

EFFECT: enlarging application area and functional capabilities, improving quality, reproducibility of electric physical parametres of MDS structure, decreasing the thickness of dielectric layer to tunnel thin thicknesses and improving its passivation properties.

24 cl, 13 dwg