LOGICAL GATE FOR INTEGRAL CIRCUIT Russian patent published in 1994 - IPC

Abstract RU 2019893 C1

FIELD: computer engineering. SUBSTANCE: device has transfer zone, which has polycrystal silicon transit bus, and metal U-shaped output bus which is connected to polycrystal silicon output bus and is perpendicular to polycrystal silicon buses; input, output and transit buses are placed between power supply bus and zero voltage level bus and have equal sizes. They can be interchanged along gate in arbitrary order if necessary. EFFECT: increased functional capabilities. 3 dwg

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RU 2 019 893 C1

Authors

Кonoplev В.G.

Fomichev А.V.

Вenderli V.D.

Dates

1994-09-15—Published

1991-04-01—Filed