CHIP Russian patent published in 1997 - IPC

FIELD: computer engineering, electronics. SUBSTANCE: device has semiconductor substrate of first conductance type, drain- source regions of transistors of second conductance type which are located inside substrate, second-type semiconductor region which is located above layer of separating dielectric and has drain-source regions of first-conductance transistors, thin dielectric layers, metal power supply line, which is connected to source regions of first- conductance transistor, metal line of zero potential, which is located above source region of second-conductance transistor and is connected to it and to semiconductor substrate of first-conductance type. In addition device has polysilicon gates of transistors of first and second conductance which are located in parallel to power supply line and zero potential line. Said gates are L-shaped. In addition device has two input regions which have areas of polysilicon gates and drain-source regions of transistors of first and second conductance. In addition device has pieces of metal supply and zero-potential lines, two input metal lines which are located over regions of element in perpendicular to supply and zero- potential lines and are connected to polysilicon gates of transistors of first and second conductance. In addition device has output region which has areas of polysilicon gates and drain-source regions of transistors of first and second conductance, pieces of metal supply and zero-potential lines, output metal line, which is located above regions of element in perpendicular to power supply and zero- potential lines and is connected to drain regions of first-conductance transistors and drain region of second-conductance transistor. In addition device has transit region which has transit metal line which size is same as of output and input regions. EFFECT: decreased area, increased speed, increased stability to noise, possibility of computer-aided design. 2 dwg , 1 tbl