INTEGRATED LOGIC ELEMENT Russian patent published in 1996 - IPC

Abstract RU 2062528 C1

FIELD: computer engineering, integrated electronics. SUBSTANCE: invention is meant for design of large-scale and superlarge-scale integrated circuits based on gallium. Logic element includes semiconductor semi-insulated substrate 1 of inherent type of conductance, metal supply wire 2 and first metal wire 3 of zero potential, normally open load transistor 4 with channel 5. Gate 6 of transistor 4 is connected to its source. Element also has two input zones with normally closed key transistors 7, channels 8 and gates 9, output zone with first metal output wire 10, second metal wire of zero potential perpendicular to first metal wire of zero potential, transit zone with metal transit wire 12, second metal output wire 13 perpendicular to first metal output wire. Dash lines are conventional and designate boundaries of zones. EFFECT: facilitated manufacture. 3 dwg, 1 tbl

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RU 2 062 528 C1

Authors

Konoplev B.G.

Benderli V.D.

Ivchenko V.G.

Dates

1996-06-20Published

1992-08-17Filed