INTEGRATED LOGIC ELEMENT Russian patent published in 1997 - IPC

FIELD: computer engineering and integrated electronics; large-scale integrated circuits. SUBSTANCE: integrated logic element has semiconductor substrate of first polarity of conductivity that mounts drain-source regions of transistors of second polarity of conductivity, recrystallized silicon region of second polarity of conductivity arranged above isolating dielectric layer and incorporating drain-source regions of transistors of first polarity of conductivity, metal power bus connected to source regions of transistors of first polarity of conductivity, zero-potential metal bus arranged above source region of transistor of second polarity of conductivity, and metal bus connected to it and to semiconductor substrate of first polarity of conductivity arranged above element regions and connected to drain regions of transistors of first polarity of conductivity and to drain region of transistor of second polarity of conductivity; in addition, it is provided with two input regions having two transistors of second polarity of conductivity, two transistors of first polarity of conductivity located in recrystallized silicon region of second polarity of conductivity above transistor of second polarity of conductivity, two C-shaped polysilicon input buses functioning as gates of transistors of first and second polarities of conductivity, output region that has polysilicon output bus connected to output metal bus, transit region that has polysilicon transit bus; input, output, and transit buses placed between power and zero-potential buses are interchangeable along logic element. EFFECT: improved design. 1 dwg , 1 tbl