INTEGRATED LOGIC GATE Russian patent published in 1994 - IPC

FIELD: computer engineering and integrated electronics. SUBSTANCE: integrated logic gate has control zone incorporating p-type transistor whose gate is essentially input control bus and drain is provided with output metal bus located so that input, output, control, and transition zones placed between power buses and neutral potential have equal overall dimensions, are fully compatible with each other over interface and may be rearranged, if required, in any sequence along logic gate without changing its logical function. EFFECT: reduced space and improved speed of device incorporating logic gates of this type, reduced design expenses for integrated circuits as a whole. 3 dwg