HIGH-VOLTAGE PLANAR P-N JUNCTION Russian patent published in 1994 - IPC

Abstract RU 2019894 C1

FIELD: production of semiconductor devices. SUBSTANCE: planar p-n junction has two conduction regions of different types, p-n junction has a closed configuration. Annular zones of the same conduction are arranged about the internal zone in the form of a spiral connected with the internal zone and developing towards periphery, with the distances between the spiral turns being less than the space charge in the semiconductor surface layer at surface break-down voltage. EFFECT: enhanced quality. 2 cl, 2 dwg

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RU 2 019 894 C1

Authors

Gordeev А.I.

Nasejkin V.О.

Кorolev А.F.

Sandina N.М.

Кuts V.А.

Аndreeva Е.Е.

Dates

1994-09-15—Published

1991-11-21—Filed