FIELD: microelectronics.
SUBSTANCE: proposed method that can be used to manufacture insulator-semiconductor devices includes anodic oxidation of semiconductor wafer. In the process wafer surface is subjected to ion doping prior to anodic oxidation up to 1014 - 1016 cm2 concentration with periodic-system second-group element incorporated in AIIBVI compound; anodic oxidation is conducted down to doping layer depth.
EFFECT: improved quality of structures.
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