REACTOR FOR PLASMA TREATMENT OF SEMICONDUCTOR STRUCTURES Russian patent published in 2011 - IPC H01L21/3065 

FIELD: physics.

SUBSTANCE: reactor for plasma treatment of semiconductor structures includes a magnetic system which creates a constant magnetic field whose field lines are directed on the axis of the reactor. Axial magnetic field created by the magnetic system prevents electrons coming out of the plasma to the wall of the reactor, thereby increasing ionisation efficiency and increasing plasma density with the same power consumed by the charge. In the simplest case, the magnetic system has a coil placed outside the reactor and powered by direct current. To increase efficiency of the magnetic field, the magnetic system can consist of two coils connected in the same direction. In that case, a magnetic trap forms in space over the electrode-substrate holder, which more efficiently holds electrons, thereby increasing degree of ionisation of the plasma. Homogeneity of etching a plate with diametre of 100 mm is not less than 97%.

EFFECT: reactor with transformer-bonded plasma with inductive discharge exciting system, which enables to increase plasma density and, as a result, increase rate of plasmachemical treatment.

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