METHOD OF PLASMA ETCHING OF THIN FILMS Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: method includes loading of substrates with films formed on them in advance into reactor on substrate holder creation of vacuum in reactor and pumping in of working atmosphere up to pressure of 10^-2- 5 мм рт.ст.-5 mm Hg, superimposition of magnetic field with intensity 300-2000 Oe, excitation of plasma with density not less than 10⁸ см^-3,, treatment of substrate on substrate holder positioned either under floating potential or under bias voltage. At least one electric pulse having voltage amplitude within the limits of 500 V - 3/0 kV and duration τ = 10^-4 - 10^-2 c is fed to region of plasma. EFFECT: increased productivity of precision etching. 6 cl, 3 dwg