METHOD AND DEVICE FOR PLASMACHEMICAL TREATMENT OF SUBSTRATES Russian patent published in 2002 - IPC

FIELD: semiconductor engineering, microelectronics and power electronics. SUBSTANCE: substrates are treated in high-frequency capacitive discharge by feeding working gas along surfaces of pre-treatment discharge electrodes of coaxial geometry and adjusting its structure that dictates gas activation distribution. Plasmachemical reactor has wave trap and reverse-control dc power supply. Electrode surfaces may be developed by knurling or they may be covered with perforated insulating strap. Transformer-type matching device may be connected to device through isolating capacitor and substrate holder closed to common electrode through mentioned circuit with wave trap. Substrate holder may be enclosed in additional solenoid and pre-treatment plasma source may by surrounded by one or more circular rows of similar sources. EFFECT: enhanced surface uniformity of substrate treatment; enhanced speed of process. 18 cl, 5 dwg