REACTOR FOR PLASMA PROCESSING OF SEMICONDUCTOR STRUCTURES Russian patent published in 2018 - IPC H01L21/3065 

FIELD: technological processes.

SUBSTANCE: reactor for plasma processing of semiconductor structures refers to the field of technological devices for etching process materials in the field of production of electronic products and can be used, for example, for carrying out high-aspect silicon etching processes in the production of microelectromechanical systems (MEMS) or for creating slit insulation when implementing the technology of three-dimensional integration of crystals. Essence of the invention lies in the fact that in the reactor for plasma treatment of semiconductor structures, process gas supply and dosing unit is made in the form of the first process gas pulse delivery and dosing unit 4. Moreover, the second gas distribution module 24 with the second process gas pulse delivery and dosing unit 26 and synchronization unit 28 are introduced into the device, while the synchronization unit 28 is conjugated to the first process gas pulse delivery and dosing unit 4, with the second process gas pulse delivery and dosing unit 26, with the voltage supply unit 12, with the first power supply unit 20 of the first solenoidal coil 16 and with the second power supply unit 21 of the second solenoidal coil 17.

EFFECT: technical result of the invention consists in increasing the uniformity and speed of plasma chemical etching on substrates with a diameter of more than 100 mm, and also in ensuring the possibility of anisotropic selective plasmachemical etching of silicon structures in the MEMS production or for creating slit insulation when implementing the technology of three-dimensional crystal integration.

8 cl, 7 dwg