SEMICONDUCTOR LIMITER DIODE Russian patent published in 1994 - IPC

FIELD: solid devices of SHF and EHF ranges. SUBSTANCE: semiconductor limiter diode has low-doped region of first type of conductance where two heavily-doped regions of first type of conductance and one heavily-doped region of second type of conductance are located. Heavily-doped region of second type of conductance is separated from low-doped region by heavily-doped and doped layers of first type of conductance. Heavily-doped region of second type of conductance is connected to one of heavily-doped regions of first type of conductance with metal conductor separated from low-doped region with dielectric layer. EFFECT: facilitated manufacture, improved operational characteristics. 4 dwg