PSEUDOMORPHIC LIMITER OF POWER BASED ON HETEROSTRUCTURE AlGaN/InGaN Russian patent published in 2018 - IPC H01P1/15 

FIELD: electricity.

SUBSTANCE: invention can be used to create a new generation of microwave element base and integrated circuits based on wide-gap semiconductor heterostructures. Power limiter contains electrodes, capacitive elements. The power limiter is pseudomorphic, made on the basis of the AlGaN/InGaN heterostructure, and the capacitive element is a capacitor. In addition, power limiter includes a substrate of insulating silicon carbide, on which in series placed: a buffer layer of GaN, smoothing buffer layer of GaN, a layer of unalloyed GaN of i-type conductivity, a superlattice of Al_XGa_1-X/GaN, a buffer layer of GaN, a heavily doped layer of n-type conductivity of Al_XGa_1-XN, a spacer of solid solution Al_XGa_1-XN, a smoothing layer of GaN, a channel of the solid solution In_XGa_1-XN, and in the interface of In_XGa_1-XN/AlGaN heterostructure a two-dimensional electron gas (DEG) of high density is formed, which serves as the bottom cover of the capacitor. Over the solid solution In_XGa_1-XN achemically stable smoothing layer of GaN is placed, on top of which a dielectric layer of hafnium dioxide is deposited. On top of the dielectric metal strip electrodes are placed, which form the upper capacitor cover. Wherein, the capacitive element of the device is made with a minimum number of deep electronic traps (DX), and the channel is made elastic-stressed pseudomorphic with an InGa concentration of 15-25%.

EFFECT: improving the reliability of device and media density, suppression efficiency for current collapse, increased switching speed and output power level, easing the process of degradation in heterostructure.

5 cl, 2 dwg