SEMICONDUCTOR SWITCHING DIODE Russian patent published in 1997 - IPC

FIELD: semiconductor engineering. SUBSTANCE: semiconductor structure has four regions. Regions 1 and 2 are heavily doped near-contact layers. Layer 3 where dope concentration is lowest functions as base region of diode that primarily determines its radio frequency impedance. Region 4 is of same polarity of conductivity as base but its thickness is smaller and degree of doping is higher than those of base. In On-state, change carriers are injected in base on two sides. Thin layer 4 does not interfere with reduction of base impedance as result of its filling with quasi-neutral plasma. In OFF-state, in absence of external reverse bias, base 3 and depleted area of layer 4 form impedance-type divider whose characteristics depend on frequency, on layer parameters, and on bias voltage. EFFECT: reduced operating frequency for OFF-state of switching diode, reduced reverse bias required at low nonlinear distortions and high handled working power, as well as low control voltage amplitude. 4 dwg