FIELD: microelectronics.
SUBSTANCE: invention relates to the field of microelectronics, namely to semiconductor devices with negative differential conductivity (NDC) and can be used to create microwave integrated circuits. In a diode with negative differential conductivity, on the “silicon-on-insulator” structure, a region lightly doped with a p-type impurity between the cathode and anode and a control contact - a region heavily doped with a p-type impurity with a silicidated contact, are additionally formed, connected to the region formed between the anode by the cathode by means of a lightly doped impurity p-type regions, and these regions are doped with an impurity of different concentrations.
EFFECT: increasing the integration of elements on the IC due to the small occupied area of diodes with NDC on a chip, expanding the scope of such ICs.
1 cl, 6 dwg
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