HEAVY-DUTY PSEUDOMORPHIC SHF SWITCH Russian patent published in 2016 - IPC H01P1/00 

FIELD: electricity.

SUBSTANCE: super-high frequency switch includes a substrate on which the following components are arranged in series: AlN buffer layer, a buffer layer from GaN, a buffer layer from non-doped GaN of i conductivity type. Besides, the SHF switch includes a two-dimensional electron gas of high density, which serves as the lower armature of a capacitor, a smoothing layer from gallium nitride, a dielectric layer from hafnium dioxide, metal electrodes of a strip shape, which form the upper armature of the capacitor, and two capacitors forming double HF keys. The substrate is made from insulating heat-conducting CVD polycrystalline diamond, and on the buffer layer from non-doped GaN of i conductivity type the following components are in-series arranged: a superlattice from Al_XGa_1-XN/GaN, a buffer layer from GaN, a heavily doped layer of n conductivity type from Al_XGa_1-XN, a spacer from Al_XGa_1-XN, a smoothing layer, a channel from In_XGa_1-XN, an additional smoothing layer, a spacer from Al_XGa_1-XN, a heavily doped Al_XGa_1-XN layer, a layer from GaN, a dielectric layer from hafnium dioxide and an additional dielectric layer. The switch has minimum number of deep DX electron traps, and the channel is elastically stressed and of a pseudomorphic type and has InGa concentration of 15-25% and doped on both sides, and the two-dimensional electron gas is formed between the channel and the layer from Al_XGa_1-XN.

EFFECT: improved reliability of the device by reduction of influence of DX centres, increase of density of electrons and elimination of degradation in a heterostructure.

4 cl, 1 tbl, 2 dwg