STRUCTURE OF FORMER OF IMAGE SIGNALS ON CHARGE-COUPLED DEVICE AND PROCESS OF MANUFACTURE OF FORMER OF IMAGE SIGNALS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: structure of former of image signals based on charged-coupled device has epitaxial layer of p type formed on substrate of n type. High-doped regions of n⁺ and p⁺ types of conductance are formed between epitaxial layer and substrate. n⁺ region is located under photodiode of n type and p⁺ region is arranged under charge-coupled device of n type. Specified regions are formed in substrate by ion implantation followed by thermal treatment before deposition of epitaxial layer of p type. EFFECT: improved quality of image thanks to reduced noise causing its blurring. 2 cl, 17 dwg