FIELD: integrated microelectronics, optical data processing. SUBSTANCE: reader is assembled on semiconductor substrate and has matrix of input- device locations. Each input device has input diffusion area of polarity of conductivity reverse to that of substrate and mounts on insulating layer input gate, storage gate, carry gate, as well as output diffusion area forming circuit of charge-coupled members, column read- out bus, line control voltage shaper, multiple- input switch, input gate control bus, storage gate control bus, and carry gate control bus. Input-device matrix is built up of fragments each having four input-device locations; each fragment location has, in addition, second input gate, second input-gate control bus, first and second control buses for input gates; storage gate, carry gate, and output diffusion area are common for all fragment locations; first input gate, second input gate, and storage gate form circuit of charge-coupled members; first input gates of first and second locations of fragment input devices are connected to first control bus; first input gates of third and fourth locations of fragment input devices, to second input gate control bus; second input gates of first and third locations of fragment input devices are connected to first control bus of second input gates; second input gates of second and fourth fragment-input device locations are connected to second control bus of second input gates. EFFECT: improved charge capacitance of reader to improve its sensitivity. 2 dwg
