FIELD: microelectronics. SUBSTANCE: process includes formation of light- receiving region and transmission region by injection of ions into surface of substrate, application of layers of oxide and polycrystalline silicon over entire surface of substrate, local removal of polycrystalline silicon from above light-receiving region by means of photolythography, application of light-screening metal layer over entire surface, etching away of this layer above light-receiving region. Layer of refractory metal such as molybdenum, platinum or titanium is applied by vacuum evaporation as light-receiving metal layer. After this annealing of metal layer is performed to form local regions of metal silicide. EFFECT: facilitated manufacture, improved stability of operational characteristics. 4 dwg
