FIELD: semiconductor technology. SUBSTANCE: in compliance with invention chemical treatment of plates of indium phosphide is performed in concentrated hydrofluoric acid at temperature from 80 up to 160 C. Treatment lasts for not less than 5 min and leads to formation of adsorbed ions of fluoride on surface of semiconductor. Important feature of invention consists in deposition of metal after interval of less than 60 min after treatment. For this purpose plates of indium phosphide are heated to temperatures exceeding 120 C, fluoride volatilizes from surface and nonactive metal is sprayed. EFFECT: increased breakdown voltages thanks to growth of height of Schottky barrier. 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR SCHOTTKY-EFFECT INSTRUMENT | 1994 |
|
RU2105385C1 |
| METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE | 2013 |
|
RU2632256C2 |
| METHOD OF MAKING OHMIC CONTACT | 2024 |
|
RU2821299C1 |
| MANUFACTURING PROCESS FOR EPITAXIAL INDIUM PHOSPHIDE LOCAL STRUCTURES | 1985 |
|
SU1373232A1 |
| SILICONE DIODE WITH SCHOTTKY BARRIER JUNCTION AND METHOD OF ITS MANUFACTURING | 2014 |
|
RU2550374C1 |
| PROCESS OF MANUFACTURE OF SEMICONDUCTOR OPTOELECTRON DEVICES | 1983 |
|
SU1829804A1 |
| METHOD FOR MANUFACTURING A TWO-SPECTRUM PHOTOSENSITIVE ELEMENT BASED ON A SCHOTTKY BARRIER | 2022 |
|
RU2790061C1 |
| PROCESS OF MANUFACTURE OF EPITAXIAL STRUCTURE CONTAINING LAYERS OF INDIUM PHOSPHIDE AND ARSENIDE-INDIUM PHOSPHIDE IN AS OOX P OO1-OOX | 1990 |
|
RU2032960C1 |
| HEAT FUSION METHOD | 2014 |
|
RU2564685C1 |
| METHOD OF ZINC ALLOYING SUBSTRATES OR LAYERS OF INDIUM PHOSPHIDE | 2018 |
|
RU2686523C1 |
