FIELD: semiconductor electronics. SUBSTANCE: device has contact of metal and indium phosphide which is generated in dielectric hole, and protection epitaxial layer of solid solution of InxGai-xAs (0≤x≤0,53), which is applied over InP layer during epitaxial development. EFFECT: increased functional capabilities. 1 dwg
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Authors
Dates
1998-02-20—Published
1994-10-18—Filed