SEMICONDUCTOR SCHOTTKY-EFFECT INSTRUMENT Russian patent published in 1998 - IPC

Abstract RU 2105385 C1

FIELD: semiconductor electronics. SUBSTANCE: device has contact of metal and indium phosphide which is generated in dielectric hole, and protection epitaxial layer of solid solution of InxGai-xAs (0≤x≤0,53), which is applied over InP layer during epitaxial development. EFFECT: increased functional capabilities. 1 dwg

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RU 2 105 385 C1

Authors

Malakhovskij O.Ju.

Bozhkov V.G.

Misevichus G.N.

Korableva T.V.

Dates

1998-02-20Published

1994-10-18Filed