MANUFACTURING PROCESS FOR EPITAXIAL INDIUM PHOSPHIDE LOCAL STRUCTURES Russian patent published in 1996 - IPC

FIELD: manufacturing process for field-effect transistors. SUBSTANCE: local cavities are made on semiconductor surface by chemical etching through mask. Quality of epitaxial layer formed in cavity is greatly influenced by presence or absence of natural oxide on semiconductor surface in cavity. According to invention, semiconductor surface is protected against oxides by its treatment in hydrofluoric acid at 80 to 106 C for 5 to 15 min. The result is that dense adsorbed monolayer of fluorine atoms is formed on atomically pure semiconductor surface, which protects the latter from oxidation. EFFECT: improved quality of epitaxial structures due to eimination of high-resistance layer in substrate-epitaxial layer transistion. 3 dwg