PROCESS OF MANUFACTURE OF LAYERS OF P TYPE CONDUCTANCE IN SAMPLES CD OOXNG OO1 OO- OOXTE OF P TYPE Russian patent published in 1995 - IPC

Abstract RU 2035804 C1

FIELD: manufacture of photodevices. SUBSTANCE: process consists in treatment of surface of sample of Cd_xHg_1-xTe of p-type in plasma of high-frequency with accelerated ions with energy 1-10 eV and current density 4-8 mА/сm².. Then layer by layer etching of sample is conducted alternated by check of free carriers on surface. Etching is conducted till layer having electron concentration n ≅ 2·10¹⁴ cm^-3 for x ≅ 0,22. is obtained. EFFECT: facilitated manufacture, increased quality of layers. 2 cl, 2 dwg, 1 tbl

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RU 2 035 804 C1

Authors

Rjazantsev I.A.

Dvurechenskij A.V.

Talipov N.Kh.

Mishchenko A.M.

Dates

1995-05-20—Published

1992-04-20—Filed