METHOD FOR PRODUCING SEMICONDUCTOR DEVICE MATRICES ON SUBSTRATE Russian patent published in 1997 - IPC

Abstract RU 2097871 C1

FIELD: manufacture of semiconductor devices. SUBSTANCE: matrices are produced on Cd_xHg_1-xTe substrates. Manufacturing process involves chemical polishing in bromine etcher, washing of surfaces in organic solvents, their coating with insulation, and evaporation of metal; after etching and washing surfaces in organic solvent, substrate surface is treated with fluorine-containing aqueous solution having fluorine concentration of 3-20%, followed by washing with water. EFFECT: facilitated procedure, reduced cost and labour consumption in manufacturing matrices of stable and uniform devices with sufficiently high characteristics. 4 dwg

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RU 2 097 871 C1

Authors

Romashko L.N.

Mjasnikov A.M.

Obodnikov V.I.

Ovsjuk V.N.

Vasil'Ev V.V.

Zemtsova T.A.

Dates

1997-11-27—Published

1995-04-05—Filed