PROCESS OF FORMATION OF P TYPE STRUCTURES WITH DEEPLY COMPENSATED LAYER ON SAMPLES Russian patent published in 1994 - IPC

FIELD: semiconductor technology. SUBSTANCE: ions having energy 10- 150 keV and dose Cd_xHg_1-xTe cm are implanted into sample of 10¹²- 10¹⁴ cm^-2. of P type structure heated up to 70-170 C. For masking of sample with encapsulating dielectric coat implantation is performed with ions which energy increases by value of energy losses in dielectric. After implantation of ions surface layer of sample with thickness not less than value of path of ions in semiconductor and not greater than value at which concentration of electrons on surface equals 10¹⁵- 10¹⁷ cm^-3. is removed. EFFECT: facilitated manufacturing process. 4 cl, 2 dwg, 1 tbl