METHOD OF SMOOTH PATTERN PRODUCTION ON INTEGRATED CIRCUITS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: method involves formation of varying-width conductors on semiconductor substrate with active and passive components, deposition of dielectric film, h≥ 2.5 d thick, where d is conductor thickness, etching of dielectric film by using liquid method through depth equal to conductor thickness, removal of photoresist, and repeated etching of dielectric film through depth equal to conductor thickness using liquid method or proceeding in two stages for etching dielectric film: first stage involves HF magnetron etching through depth of 0.25 to 0.30 micron and second stage, liquid etching. EFFECT: improved smoothness of integrated circuit surface. 3 cl, 4 dwg