METHOD FOR STORING AND READING BINARY INFORMATION Russian patent published in 1995 - IPC

Abstract RU 2044345 C1

FIELD: information devices. SUBSTANCE: method involves storing information to carrier which is made from thin film of silicon oxynitride on substrate of low-ohmic single-crystal silicon. When information is stored, carrier is affected by power ray of electric field. When information is read, tunnel point from layer areas with local changes in conductance is detected by means of tunnel microscope. EFFECT: increased functional capabilities.

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RU 2 044 345 C1

Authors

Il'Chishin V.A.

Nazarenko A.G.

Dates

1995-09-20—Published

1993-08-30—Filed