PERMANENT STORAGE ACCUMULATOR Russian patent published in 1994 - IPC

Abstract RU 2006968 C1

FIELD: microelectronic engineering. SUBSTANCE: accumulator has graphite substrate 1 upper subsurface layer 2 of which is treated with acidic metals (K, Pb, Cs), coated also at end surfaces, with carbon layer 3, 1 nm thick. EFFECT: improved reliability of accumulator. 3 dwg

Similar patents RU2006968C1

Title Year Author Number
READ-ONLY STORAGE MEDIUM 1991
  • Portnov S.M.
  • Varlamov O.I.
  • Zimin A.V.
  • Inkin V.N.
  • Emel'Janov A.V.
RU2029394C1
PERMANENT STORAGE AND METHOD OF RECORDING INFORMATION IN IT 1989
  • Emel'Janov A.V.
  • Poltoratskij Eh.A.
  • Samsonov N.S.
RU1655240C
TWO-GATE MIS STRUCTURE WITH VERTICAL CHANNEL 1995
  • Rakitin V.V.
RU2106721C1
STRUCTURE OF POLYMER/NEAR SURFACE MODIFIED LAYER AND METHOD OF ITS PREPARING 1998
  • Alekhin A.P.
  • Isaev V.I.
  • Mazurenko S.N.
  • Sevast'Janov V.I.
  • Belomestnaja Z.M.
  • Drushljak I.V.
RU2153887C2
METHOD FOR MEASURING SURFACE RELIEF BY MEANS OF SCANNING PROBE TYPE MICROSCOPE 1999
  • Lapshin R.V.
RU2175761C2
MIS STORAGE ITEM MANUFACTURING TECHNIQUE 1990
  • Labudin G.I.
  • Maslovskij V.M.
  • Vasil'Ev B.I.
  • Gritsenko V.A.
  • Kovtunenko S.A.
RU2006966C1
FIELD-EFFECT SCHOTTKY TRANSISTOR 1991
  • Gergel' V.A.
  • Il'Ichev Eh.A.
  • Onishchenko V.A.
  • Poltoratskij Eh.A.
  • Rodionov A.V.
  • Tarnavskij S.P.
  • Fedorenko A.V.
RU2025831C1
PROCESS OF PRODUCTION OF NANOSTRUCTURES 1994
  • Emel'Janov A.V.
  • Portnov S.M.
  • Rjabokon' V.N.
  • Samsonov N.S.
RU2105384C1
SHIFT REGISTER 1989
  • Poltoratskij Ehduard Alekseevich[Ru]
  • Ponimasov Vladimir Nikolaevich[Ru]
  • Reshetnikov Sergej Evgen'Evich[Lt]
  • Rychkov Gennadij Sergeevich[Ru]
RU2066886C1
METHOD OF MANUFACTURING SILICON DIOXIDE FILM ON SUBSTRATE 1996
  • Alekhin A.P.
  • Mazurenko S.N.
  • Markeev A.M.
  • Naumenko O.I.
RU2116686C1

RU 2 006 968 C1

Authors

Emel'Janov A.V.

Portnov S.M.

Dates

1994-01-30Published

1990-12-06Filed